Enhancing neutron radiation resistance of silicon-based semiconductor devices through isotope separation and enrichment.

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Bibliographic Details
Title: Enhancing neutron radiation resistance of silicon-based semiconductor devices through isotope separation and enrichment.
Authors: Bai, Ying1 (AUTHOR), Cai, Zeng-Hua2 (AUTHOR), Wu, Yu-Ning1 (AUTHOR) ynwu@phy.ecnu.edu.cn, Chen, Shiyou1,3 (AUTHOR) chensy@ee.ecnu.edu.cn
Source: Radiation Effects & Defects in Solids: Incorporating Plasma Techniques & Plasma Phenomena. MayJun2021, Vol. 176 Issue 5/6, p419-430. 12p.
Database: Academic Search Ultimate
Description
ISSN:10420150
DOI:10.1080/10420150.2020.1855178