APA (7th ed.) Citation

Bai, Y., Cai, Z., Wu, Y., & Chen, S. (2021). Enhancing neutron radiation resistance of silicon-based semiconductor devices through isotope separation and enrichment. Radiation Effects & Defects in Solids: Incorporating Plasma Techniques & Plasma Phenomena, 176(5/6), 419. https://doi.org/10.1080/10420150.2020.1855178

Chicago Style (17th ed.) Citation

Bai, Ying, Zeng-Hua Cai, Yu-Ning Wu, and Shiyou Chen. "Enhancing Neutron Radiation Resistance of Silicon-based Semiconductor Devices Through Isotope Separation and Enrichment." Radiation Effects & Defects in Solids: Incorporating Plasma Techniques & Plasma Phenomena 176, no. 5/6 (2021): 419. https://doi.org/10.1080/10420150.2020.1855178.

MLA (9th ed.) Citation

Bai, Ying, et al. "Enhancing Neutron Radiation Resistance of Silicon-based Semiconductor Devices Through Isotope Separation and Enrichment." Radiation Effects & Defects in Solids: Incorporating Plasma Techniques & Plasma Phenomena, vol. 176, no. 5/6, 2021, p. 419, https://doi.org/10.1080/10420150.2020.1855178.