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Enhancing neutron radiation resistance of silicon-based semiconductor devices through isotope separation and enrichment.

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Title: Enhancing neutron radiation resistance of silicon-based semiconductor devices through isotope separation and enrichment.
Authors: Bai, Ying1 (AUTHOR), Cai, Zeng-Hua2 (AUTHOR), Wu, Yu-Ning1 (AUTHOR) ynwu@phy.ecnu.edu.cn, Chen, Shiyou1,3 (AUTHOR) chensy@ee.ecnu.edu.cn
Source: Radiation Effects & Defects in Solids: Incorporating Plasma Techniques & Plasma Phenomena. MayJun2021, Vol. 176 Issue 5/6, p419-430. 12p.
Database: Academic Search Ultimate
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PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=asn&AN=151136704
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        Value: 10.1080/10420150.2020.1855178
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      – Code: eng
        Text: English
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        PageCount: 12
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      – TitleFull: Enhancing neutron radiation resistance of silicon-based semiconductor devices through isotope separation and enrichment.
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            NameFull: Cai, Zeng-Hua
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            NameFull: Wu, Yu-Ning
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              Text: MayJun2021
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              Y: 2021
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              Value: 176
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              Value: 5/6
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            – TitleFull: Radiation Effects & Defects in Solids: Incorporating Plasma Techniques & Plasma Phenomena
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