Double-gate MOSFET Model Implemented in Verilog-AMS Language for the Transient Simulation and the Configuration of Ultra Low-power Analog Circuits.

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Bibliographic Details
Title: Double-gate MOSFET Model Implemented in Verilog-AMS Language for the Transient Simulation and the Configuration of Ultra Low-power Analog Circuits.
Authors: Smaani, Billel1 b.smaani@univ-boumerdes.dz, Meraihi, Yacin2 y.meraihi@univ-boumerdes.dz, Nafa, Fares2 f.nafa@univ-boumerdes.dz, Benlatreche, Mohamed Salah3 msbenlatreche@univ-boumerdes.dz, Akroum, Hamza4 akroum@gmail.com, Latreche, Saida5 latreche.saida@gmail.com
Source: International Journal of Electronics & Telecommunications. 2021, Vol. 67 Issue 4, p609-614. 6p.
Database: Academic Search Ultimate
Description
ISSN:20818491
DOI:10.24425/ijet.2021.137853