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Electron Mobility in Bulk n-Doped SiC-Polytypes 3C-SiC, 4H-SiC, and 6H-SiC: A Comparison.

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Bibliographic Details
Title: Electron Mobility in Bulk n-Doped SiC-Polytypes 3C-SiC, 4H-SiC, and 6H-SiC: A Comparison.
Authors: Rodrigues, C. G.1 (AUTHOR) cloves@pucgoias.edu.br
Source: Semiconductors. Jul2021, Vol. 55 Issue 7, p625-632. 8p.
Database: Academic Search Ultimate
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Description
ISSN:10637826
DOI:10.1134/S1063782621070150