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Electron Mobility in Bulk n-Doped SiC-Polytypes 3C-SiC, 4H-SiC, and 6H-SiC: A Comparison.

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Title: Electron Mobility in Bulk n-Doped SiC-Polytypes 3C-SiC, 4H-SiC, and 6H-SiC: A Comparison.
Authors: Rodrigues, C. G.1 (AUTHOR) cloves@pucgoias.edu.br
Source: Semiconductors. Jul2021, Vol. 55 Issue 7, p625-632. 8p.
Database: Academic Search Ultimate
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  Data: Electron Mobility in Bulk n-Doped SiC-Polytypes 3C-SiC, 4H-SiC, and 6H-SiC: A Comparison.
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  Data: <searchLink fieldCode="JN" term="%22Semiconductors%22">Semiconductors</searchLink>. Jul2021, Vol. 55 Issue 7, p625-632. 8p.
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              Text: Jul2021
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