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Effects of JFET Region Design and Gate Oxide Thickness on the Static and Dynamic Performance of 650 V SiC Planar Power MOSFETs.

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Title: Effects of JFET Region Design and Gate Oxide Thickness on the Static and Dynamic Performance of 650 V SiC Planar Power MOSFETs.
Authors: Zhu, Shengnan1 (AUTHOR) zhu.2670@osu.edu, Liu, Tianshi1 (AUTHOR), Fan, Junchong1 (AUTHOR), Maddi, Hema Lata Rao1 (AUTHOR), White, Marvin H.1 (AUTHOR), Agarwal, Anant K.1 (AUTHOR)
Source: Materials (1996-1944). Sep2022, Vol. 15 Issue 17, p5995. 11p.
Database: Academic Search Ultimate
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ISSN:19961944
DOI:10.3390/ma15175995