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Effects of JFET Region Design and Gate Oxide Thickness on the Static and Dynamic Performance of 650 V SiC Planar Power MOSFETs.

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Title: Effects of JFET Region Design and Gate Oxide Thickness on the Static and Dynamic Performance of 650 V SiC Planar Power MOSFETs.
Authors: Zhu, Shengnan1 (AUTHOR) zhu.2670@osu.edu, Liu, Tianshi1 (AUTHOR), Fan, Junchong1 (AUTHOR), Maddi, Hema Lata Rao1 (AUTHOR), White, Marvin H.1 (AUTHOR), Agarwal, Anant K.1 (AUTHOR)
Source: Materials (1996-1944). Sep2022, Vol. 15 Issue 17, p5995. 11p.
Database: Academic Search Ultimate
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An: 159035369
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  Data: Effects of JFET Region Design and Gate Oxide Thickness on the Static and Dynamic Performance of 650 V SiC Planar Power MOSFETs.
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  Data: <searchLink fieldCode="JN" term="%22Materials+%281996-1944%29%22">Materials (1996-1944)</searchLink>. Sep2022, Vol. 15 Issue 17, p5995. 11p.
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=asn&AN=159035369
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        Value: 10.3390/ma15175995
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      – Code: eng
        Text: English
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        PageCount: 11
        StartPage: 5995
    Titles:
      – TitleFull: Effects of JFET Region Design and Gate Oxide Thickness on the Static and Dynamic Performance of 650 V SiC Planar Power MOSFETs.
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            NameFull: Zhu, Shengnan
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            NameFull: Liu, Tianshi
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            NameFull: Fan, Junchong
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            NameFull: Maddi, Hema Lata Rao
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            NameFull: White, Marvin H.
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            – D: 01
              M: 09
              Text: Sep2022
              Type: published
              Y: 2022
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              Value: 19961944
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              Value: 15
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              Value: 17
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