Silicon interstitial injection during dry oxidation of SiGe/Si layers.

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Bibliographic Details
Title: Silicon interstitial injection during dry oxidation of SiGe/Si layers.
Authors: Napolitani, E.1, di Marino, M.1, de Salvador, D.1, Carnera, A.1, Spadafora, M.2, Mirabella, S.2, Terrasi, A.2, Scalese, S.3
Source: Journal of Applied Physics. 2/1/2005, Vol. 97 Issue 3, p036106. 3p. 1 Black and White Photograph, 2 Graphs.
Database: Academic Search Ultimate
Description
ISSN:00218979
DOI:10.1063/1.1844606