A New Cell Topology for 4H-SiC Planar Power MOSFETs for High-Frequency Switching.

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Bibliographic Details
Title: A New Cell Topology for 4H-SiC Planar Power MOSFETs for High-Frequency Switching.
Authors: Zhu, Shengnan1 (AUTHOR) zhu.2670@osu.edu, Liu, Tianshi1 (AUTHOR), Fan, Junchong1 (AUTHOR), Salemi, Arash2 (AUTHOR), White, Marvin H.1 (AUTHOR), Sheridan, David2 (AUTHOR), Agarwal, Anant K.1 (AUTHOR)
Source: Materials (1996-1944). Oct2022, Vol. 15 Issue 19, p6690. 6p.
Database: Academic Search Ultimate
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ISSN:19961944
DOI:10.3390/ma15196690