Design of a Gate-Driving Cell for Enabling Extended SiC MOSFET Voltage Blocking.

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Bibliographic Details
Title: Design of a Gate-Driving Cell for Enabling Extended SiC MOSFET Voltage Blocking.
Authors: Issa, Walid1 (AUTHOR) walid.issa@shu.ac.uk, Ortiz Gonzalez, Jose2 (AUTHOR), Alatise, Olayiwola2 (AUTHOR)
Source: Energies (19961073). Oct2022, Vol. 15 Issue 20, p7768-N.PAG. 20p.
Database: Academic Search Ultimate
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ISSN:19961073
DOI:10.3390/en15207768