Temperature sensitive analytical analysis of gate‐stack dual metal nanowire field‐effect transistor (4H‐SiC).
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| Title: | Temperature sensitive analytical analysis of gate‐stack dual metal nanowire field‐effect transistor (4H‐SiC). |
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| Authors: | Neeraj1 (AUTHOR) s.neerumalik@gmail.com, Sharma, Shobha1 (AUTHOR), Goel, Anubha2 (AUTHOR) anubhagoel15@gmail.com, Rewari, Sonam3 (AUTHOR), Gupta, Radhey Shyam2 (AUTHOR) |
| Source: | International Journal of Numerical Modelling. Jul2023, Vol. 36 Issue 4, p1-15. 15p. |
| Database: | Academic Search Ultimate |
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| ISSN: | 08943370 |
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| DOI: | 10.1002/jnm.3065 |
