Electrical control of transient formation of electron-hole coexisting system at silicon metal-oxide-semiconductor interfaces.

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Bibliographic Details
Title: Electrical control of transient formation of electron-hole coexisting system at silicon metal-oxide-semiconductor interfaces.
Authors: Hori, Masahiro1,2 (AUTHOR) hori.masahiro@shizuoka.ac.jp, Kume, Jinya2 (AUTHOR), Razanoelina, Manjakavahoaka1 (AUTHOR), Kageshima, Hiroyuki3 (AUTHOR), Ono, Yukinori1,2 (AUTHOR)
Source: Communications Physics. 10/31/2023, Vol. 6 Issue 1, p1-11. 11p.
Database: Academic Search Ultimate
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ISSN:23993650
DOI:10.1038/s42005-023-01428-1