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Electrical control of transient formation of electron-hole coexisting system at silicon metal-oxide-semiconductor interfaces.

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Title: Electrical control of transient formation of electron-hole coexisting system at silicon metal-oxide-semiconductor interfaces.
Authors: Hori, Masahiro1,2 (AUTHOR) hori.masahiro@shizuoka.ac.jp, Kume, Jinya2 (AUTHOR), Razanoelina, Manjakavahoaka1 (AUTHOR), Kageshima, Hiroyuki3 (AUTHOR), Ono, Yukinori1,2 (AUTHOR)
Source: Communications Physics. 10/31/2023, Vol. 6 Issue 1, p1-11. 11p.
Database: Academic Search Ultimate
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  Data: Electrical control of transient formation of electron-hole coexisting system at silicon metal-oxide-semiconductor interfaces.
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  Data: <searchLink fieldCode="AR" term="%22Hori%2C+Masahiro%22">Hori, Masahiro</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<i> hori.masahiro@shizuoka.ac.jp</i><br /><searchLink fieldCode="AR" term="%22Kume%2C+Jinya%22">Kume, Jinya</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Razanoelina%2C+Manjakavahoaka%22">Razanoelina, Manjakavahoaka</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Kageshima%2C+Hiroyuki%22">Kageshima, Hiroyuki</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Ono%2C+Yukinori%22">Ono, Yukinori</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)
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  Data: <searchLink fieldCode="JN" term="%22Communications+Physics%22">Communications Physics</searchLink>. 10/31/2023, Vol. 6 Issue 1, p1-11. 11p.
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=asn&AN=173367109
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        Value: 10.1038/s42005-023-01428-1
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      – Code: eng
        Text: English
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      – TitleFull: Electrical control of transient formation of electron-hole coexisting system at silicon metal-oxide-semiconductor interfaces.
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            NameFull: Hori, Masahiro
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            NameFull: Kume, Jinya
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              Text: 10/31/2023
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              Y: 2023
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