Isotropic Contact Properties in Monolayer GeAs Field-Effect Transistors.

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Bibliographic Details
Title: Isotropic Contact Properties in Monolayer GeAs Field-Effect Transistors.
Authors: Song, Weiqi1 (AUTHOR) 2021020281@qdu.edu.cn, Liu, Haosong2 (AUTHOR) lhs_upc@163.com, Zou, Feihu1 (AUTHOR) 2021020280@qdu.edu.cn, Niu, Yize1 (AUTHOR) 2022025400@qdu.edu.cn, Zhao, Yue1 (AUTHOR) zhaoyue69@qdu.edu.cn, Cong, Yao2 (AUTHOR) cong_y1217@163.com, Pan, Yuanyuan1 (AUTHOR) panyy@qdu.edu.cn, Li, Qiang1 (AUTHOR) panyy@qdu.edu.cn
Source: Molecules. Dec2023, Vol. 28 Issue 23, p7806. 15p.
Database: Academic Search Ultimate
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ISSN:14203049
DOI:10.3390/molecules28237806