Investigation of dual memory behavior in RRAM: coexistence of resistive and capacitive switching phenomena.

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Title: Investigation of dual memory behavior in RRAM: coexistence of resistive and capacitive switching phenomena.
Authors: Kim, Hyoseob1 (AUTHOR), Kim, Suhan1 (AUTHOR), Cho, Jae-Yeong2 (AUTHOR), Lee, Sin-Hyung2 (AUTHOR) sinhlee@uos.ac.kr, Kim, Min-Hwi1,3 (AUTHOR) minhwi@cau.ac.kr
Source: Scientific Reports. 4/19/2025, Vol. 15 Issue 1, p1-12. 12p.
Database: Academic Search Ultimate
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ISSN:20452322
DOI:10.1038/s41598-025-96782-1