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Unveiling the Hybrid‐Channel (poly‐Si/IGO) Structure for 3D NAND Flash Memory for Improving the Cell Current and GIDL‐Assisted Erase Operation.

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Title: Unveiling the Hybrid‐Channel (poly‐Si/IGO) Structure for 3D NAND Flash Memory for Improving the Cell Current and GIDL‐Assisted Erase Operation.
Authors: Choi, Su‐Hwan1 (AUTHOR), Sim, Jae‐Min2 (AUTHOR), Shin, Jeongmin2 (AUTHOR), Ryu, Seong‐Hwan3 (AUTHOR), Hwang, Taewon3 (AUTHOR), Lim, So Young3 (AUTHOR), Oh, Hye‐Jin3 (AUTHOR), Kwag, Jae‐Hyeok1 (AUTHOR), Lee, Jun‐Yeoub1 (AUTHOR), Song, Ki‐Cheol3,4 (AUTHOR), Lee, Yeonhee4 (AUTHOR), Song, Minju5 (AUTHOR), Kim, Junghwan6 (AUTHOR), Park, Chang‐Kyun7 (AUTHOR), Song, Yun‐Heub2 (AUTHOR) yhsong2008@hanyang.ac.kr, Park, Jin‐Seong1,3 (AUTHOR) jsparklime@hanyang.ac.kr
Source: Small Structures. May2025, Vol. 6 Issue 5, p1-10. 10p.
Database: Academic Search Ultimate
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ISSN:26884062
DOI:10.1002/sstr.202400495