High Driving Capability of Dual Gate, Dual Sweep Amorphous InGaO Thin Film Transistor by N2O Plasma Treatment, Exhibiting Similar Drain Current to P‐Type Poly‐Si Device.
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| Title: | High Driving Capability of Dual Gate, Dual Sweep Amorphous InGaO Thin Film Transistor by N |
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| Authors: | Sun, Jiwon1 (AUTHOR), Bae, Jinbaek1 (AUTHOR), Lim, Taebin1 (AUTHOR), Jeong, Myeonggi1 (AUTHOR), Nahar, Sabiqun1 (AUTHOR), Kim, Yuna1 (AUTHOR), Jang, Jin1 (AUTHOR) jjang@khu.ac.kr |
| Source: | Physica Status Solidi. A: Applications & Materials Science. Jun2025, Vol. 222 Issue 11, p1-9. 9p. |
| Database: | Academic Search Ultimate |
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