Forward gate current modeling of AlGaN/AlN/GaN HEMTs based on Poisson–Schrödinger and direct tunneling equations.
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| Title: | Forward gate current modeling of AlGaN/AlN/GaN HEMTs based on Poisson–Schrödinger and direct tunneling equations. |
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| Authors: | Charlet, I.1 (AUTHOR) ismael.charlet@gmail.com, Morisot, F.1 (AUTHOR), Gobil, Y.1 (AUTHOR), Anotta, A.1 (AUTHOR), Gaillard, F.1 (AUTHOR), Duriez, B.1 (AUTHOR), Morvan, E.1 (AUTHOR) erwan.morvan@cea.fr |
| Source: | APL Electronic Devices. Sep2025, Vol. 1 Issue 3, p1-9. 9p. |
| Database: | Academic Search Ultimate |
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| ISSN: | 29958423 |
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| DOI: | 10.1063/5.0275755 |
