APA (7th ed.) Citation

Charlet, I., Morisot, F., Gobil, Y., Anotta, A., Gaillard, F., Duriez, B., & Morvan, E. (2025). Forward gate current modeling of AlGaN/AlN/GaN HEMTs based on Poisson–Schrödinger and direct tunneling equations. APL Electronic Devices, 1(3), 1. https://doi.org/10.1063/5.0275755

Chicago Style (17th ed.) Citation

Charlet, I., F. Morisot, Y. Gobil, A. Anotta, F. Gaillard, B. Duriez, and E. Morvan. "Forward Gate Current Modeling of AlGaN/AlN/GaN HEMTs Based on Poisson–Schrödinger and Direct Tunneling Equations." APL Electronic Devices 1, no. 3 (2025): 1. https://doi.org/10.1063/5.0275755.

MLA (9th ed.) Citation

Charlet, I., et al. "Forward Gate Current Modeling of AlGaN/AlN/GaN HEMTs Based on Poisson–Schrödinger and Direct Tunneling Equations." APL Electronic Devices, vol. 1, no. 3, 2025, p. 1, https://doi.org/10.1063/5.0275755.