Forward gate current modeling of AlGaN/AlN/GaN HEMTs based on Poisson–Schrödinger and direct tunneling equations.
Saved in:
| Title: | Forward gate current modeling of AlGaN/AlN/GaN HEMTs based on Poisson–Schrödinger and direct tunneling equations. |
|---|---|
| Authors: | Charlet, I.1 (AUTHOR) ismael.charlet@gmail.com, Morisot, F.1 (AUTHOR), Gobil, Y.1 (AUTHOR), Anotta, A.1 (AUTHOR), Gaillard, F.1 (AUTHOR), Duriez, B.1 (AUTHOR), Morvan, E.1 (AUTHOR) erwan.morvan@cea.fr |
| Source: | APL Electronic Devices. Sep2025, Vol. 1 Issue 3, p1-9. 9p. |
| Database: | Academic Search Ultimate |
|
Full text is not displayed to guests.
Login for full access.
|
|
| FullText | Links: – Type: pdflink Text: Availability: 1 |
|---|---|
| Header | DbId: asn DbLabel: Academic Search Ultimate An: 188430421 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
| IllustrationInfo | |
| Items | – Name: Title Label: Title Group: Ti Data: Forward gate current modeling of AlGaN/AlN/GaN HEMTs based on Poisson–Schrödinger and direct tunneling equations. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Charlet%2C+I%2E%22">Charlet, I.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> ismael.charlet@gmail.com</i><br /><searchLink fieldCode="AR" term="%22Morisot%2C+F%2E%22">Morisot, F.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Gobil%2C+Y%2E%22">Gobil, Y.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Anotta%2C+A%2E%22">Anotta, A.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Gaillard%2C+F%2E%22">Gaillard, F.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Duriez%2C+B%2E%22">Duriez, B.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Morvan%2C+E%2E%22">Morvan, E.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> erwan.morvan@cea.fr</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22APL+Electronic+Devices%22">APL Electronic Devices</searchLink>. Sep2025, Vol. 1 Issue 3, p1-9. 9p. |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=asn&AN=188430421 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1063/5.0275755 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 9 StartPage: 1 Titles: – TitleFull: Forward gate current modeling of AlGaN/AlN/GaN HEMTs based on Poisson–Schrödinger and direct tunneling equations. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Charlet, I. – PersonEntity: Name: NameFull: Morisot, F. – PersonEntity: Name: NameFull: Gobil, Y. – PersonEntity: Name: NameFull: Anotta, A. – PersonEntity: Name: NameFull: Gaillard, F. – PersonEntity: Name: NameFull: Duriez, B. – PersonEntity: Name: NameFull: Morvan, E. IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 09 Text: Sep2025 Type: published Y: 2025 Identifiers: – Type: issn-print Value: 29958423 Numbering: – Type: volume Value: 1 – Type: issue Value: 3 Titles: – TitleFull: APL Electronic Devices Type: main |
| ResultId | 1 |