EFFECT OF DYSPROSIUM ATOMS INTRODUCED DURING THE GROWTH PHASE ON THE FORMATION OF RADIATION DEFECTS IN SILICON CRYSTALS.

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Bibliographic Details
Title: EFFECT OF DYSPROSIUM ATOMS INTRODUCED DURING THE GROWTH PHASE ON THE FORMATION OF RADIATION DEFECTS IN SILICON CRYSTALS.
Alternate Title: ВПЛИВ АТОМІВ ДИСПРОЗІЮ, ВВЕДЕНИХ НА ЕТАПІ ВИРОЩУВАННЯ, НА ФОРМУВАННЯ РАДІАЦІЙНИХ ДЕФЕКТІВ У КРИСТАЛАХ КРЕМНІЮ
Authors: Daliev, Khodjakbar S.1, Utamuradova, Sharifa B.2, Daliev, Shakhrukh Kh.2, Khamdamov, Jonibek J.2, Norkulov, Shahriyor B.2 nshb19990@gmail.com
Source: East European Journal of Physics. 2025, Issue 3, p343-347. 5p.
Database: Academic Search Ultimate
Description
ISSN:23124334
DOI:10.26565/2312-4334-2025-3-33