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Local p‐ and n‐Type Doping of an Oxide Semiconductor via Electric‐Field‐Driven Defect Migration.

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Bibliographic Details
Title: Local p‐ and n‐Type Doping of an Oxide Semiconductor via Electric‐Field‐Driven Defect Migration.
Authors: He, Jiali1 (AUTHOR), Ludacka, Ursula1 (AUTHOR), Hunnestad, Kasper A.1,2 (AUTHOR), Småbråten, Didrik R.1,3 (AUTHOR), Shapovalov, Konstantin4 (AUTHOR), Vullum, Per Erik5,6 (AUTHOR), Hatzoglou, Constantinos1 (AUTHOR), Evans, Donald M.1,3 (AUTHOR), Roede, Erik D.1 (AUTHOR), Yan, Zewu7,8 (AUTHOR), Bourret, Edith8 (AUTHOR), Selbach, Sverre M.1 (AUTHOR), Gao, David6,9 (AUTHOR), Akola, Jaakko6,10 (AUTHOR), Meier, Dennis1,11 (AUTHOR) dennis.meier@uni-due.de
Source: Advanced Science. 11/20/2025, Vol. 12 Issue 43, p1-9. 9p.
Database: Academic Search Ultimate
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ISSN:21983844
DOI:10.1002/advs.202506629