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Local p‐ and n‐Type Doping of an Oxide Semiconductor via Electric‐Field‐Driven Defect Migration.

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Title: Local p‐ and n‐Type Doping of an Oxide Semiconductor via Electric‐Field‐Driven Defect Migration.
Authors: He, Jiali1 (AUTHOR), Ludacka, Ursula1 (AUTHOR), Hunnestad, Kasper A.1,2 (AUTHOR), Småbråten, Didrik R.1,3 (AUTHOR), Shapovalov, Konstantin4 (AUTHOR), Vullum, Per Erik5,6 (AUTHOR), Hatzoglou, Constantinos1 (AUTHOR), Evans, Donald M.1,3 (AUTHOR), Roede, Erik D.1 (AUTHOR), Yan, Zewu7,8 (AUTHOR), Bourret, Edith8 (AUTHOR), Selbach, Sverre M.1 (AUTHOR), Gao, David6,9 (AUTHOR), Akola, Jaakko6,10 (AUTHOR), Meier, Dennis1,11 (AUTHOR) dennis.meier@uni-due.de
Source: Advanced Science. 11/20/2025, Vol. 12 Issue 43, p1-9. 9p.
Database: Academic Search Ultimate
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  Data: Local p‐ and n‐Type Doping of an Oxide Semiconductor via Electric‐Field‐Driven Defect Migration.
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  Data: <searchLink fieldCode="JN" term="%22Advanced+Science%22">Advanced Science</searchLink>. 11/20/2025, Vol. 12 Issue 43, p1-9. 9p.
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=asn&AN=189450066
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