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Local p‐ and n‐Type Doping of an Oxide Semiconductor via Electric‐Field‐Driven Defect Migration.

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Bibliographic Details
Title:	Local p‐ and n‐Type Doping of an Oxide Semiconductor via Electric‐Field‐Driven Defect Migration.
Authors:	He, Jiali¹ (AUTHOR), Ludacka, Ursula¹ (AUTHOR), Hunnestad, Kasper A.^1,2 (AUTHOR), Småbråten, Didrik R.^1,3 (AUTHOR), Shapovalov, Konstantin⁴ (AUTHOR), Vullum, Per Erik^5,6 (AUTHOR), Hatzoglou, Constantinos¹ (AUTHOR), Evans, Donald M.^1,3 (AUTHOR), Roede, Erik D.¹ (AUTHOR), Yan, Zewu^7,8 (AUTHOR), Bourret, Edith⁸ (AUTHOR), Selbach, Sverre M.¹ (AUTHOR), Gao, David^6,9 (AUTHOR), Akola, Jaakko^6,10 (AUTHOR), Meier, Dennis^1,11 (AUTHOR) dennis.meier@uni-due.de
Source:	Advanced Science. 11/20/2025, Vol. 12 Issue 43, p1-9. 9p.
Database:	Academic Search Ultimate
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