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Impact of the Schottky Barrier and Contact‐Induced Strain Variations inside the Channel on the Electrical Behavior of Monolayer MoS2 Transistors.

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Bibliographic Details
Title: Impact of the Schottky Barrier and Contact‐Induced Strain Variations inside the Channel on the Electrical Behavior of Monolayer MoS2 Transistors.
Authors: Panasci, Salvatore Ethan1 (AUTHOR), Schilirò, Emanuela1 (AUTHOR), Greco, Giuseppe1 (AUTHOR), Fiorenza, Patrick1 (AUTHOR), Vivona, Marilena1 (AUTHOR), Di Franco, Salvatore1 (AUTHOR), Roccaforte, Fabrizio1 (AUTHOR), Esposito, Fiorenza2,3 (AUTHOR), Bosi, Matteo2 (AUTHOR), Attolini, Giovanni2 (AUTHOR), Píš, Igor3 (AUTHOR), Bondino, Federica3 (AUTHOR), Pedio, Maddalena3 (AUTHOR), Madonia, Antonino4 (AUTHOR), Cannas, Marco4 (AUTHOR), Agnello, Simonpietro4 (AUTHOR), Seravalli, Luca2 (AUTHOR) luca.seravalli@imem.cnr.it, Giannazzo, Filippo1 (AUTHOR) filippo.giannazzo@imm.cnr.it
Source: Small Science. Dec2025, Vol. 5 Issue 12, p1-12. 12p.
Database: Academic Search Ultimate
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DOI:10.1002/smsc.202500244