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2.34 kV β-Ga2O3 vertical trench RESURF Schottky barrier diode with sub-micron fin width.

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Bibliographic Details
Title: 2.34 kV β-Ga2O3 vertical trench RESURF Schottky barrier diode with sub-micron fin width.
Authors: Saha, Chinmoy Nath1 (AUTHOR) csaha@ucsb.edu, Roy, Saurav1 (AUTHOR), Liu, Yizheng1 (AUTHOR), Peterson, Carl1 (AUTHOR), Krishnamoorthy, Sriram1 (AUTHOR) csaha@ucsb.edu
Source: APL Electronic Devices. Dec2025, Vol. 1 Issue 4, p1-7. 7p.
Database: Academic Search Ultimate
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ISSN:29958423
DOI:10.1063/5.0299732