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2.34 kV β-Ga2O3 vertical trench RESURF Schottky barrier diode with sub-micron fin width.

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Title: 2.34 kV β-Ga2O3 vertical trench RESURF Schottky barrier diode with sub-micron fin width.
Authors: Saha, Chinmoy Nath1 (AUTHOR) csaha@ucsb.edu, Roy, Saurav1 (AUTHOR), Liu, Yizheng1 (AUTHOR), Peterson, Carl1 (AUTHOR), Krishnamoorthy, Sriram1 (AUTHOR) csaha@ucsb.edu
Source: APL Electronic Devices. Dec2025, Vol. 1 Issue 4, p1-7. 7p.
Database: Academic Search Ultimate
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  Data: 2.34 kV β-Ga<subscript>2</subscript>O<subscript>3</subscript> vertical trench RESURF Schottky barrier diode with sub-micron fin width.
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  Data: <searchLink fieldCode="AR" term="%22Saha%2C+Chinmoy+Nath%22">Saha, Chinmoy Nath</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> csaha@ucsb.edu</i><br /><searchLink fieldCode="AR" term="%22Roy%2C+Saurav%22">Roy, Saurav</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Liu%2C+Yizheng%22">Liu, Yizheng</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Peterson%2C+Carl%22">Peterson, Carl</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Krishnamoorthy%2C+Sriram%22">Krishnamoorthy, Sriram</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> csaha@ucsb.edu</i>
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  Data: <searchLink fieldCode="JN" term="%22APL+Electronic+Devices%22">APL Electronic Devices</searchLink>. Dec2025, Vol. 1 Issue 4, p1-7. 7p.
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=asn&AN=190606909
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        Value: 10.1063/5.0299732
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        Text: English
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              M: 12
              Text: Dec2025
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              Y: 2025
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