Improved dispersion control and gate stability in scaled RF GaN HEMTs using ALD TiN gate.
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| Title: | Improved dispersion control and gate stability in scaled RF GaN HEMTs using ALD TiN gate. |
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| Authors: | Bai, Ruixin1 (AUTHOR) rbai33@wisc.edu, Seshadri, Parthasarathy1 (AUTHOR), Chen, Jiahao1 (AUTHOR), Mukhopadhyay, Swarnav1 (AUTHOR), Li, Chenglong1 (AUTHOR), Pasayat, Shubhra S.1 (AUTHOR), Gupta, Chirag1 (AUTHOR) |
| Source: | APL Electronic Devices. Dec2025, Vol. 1 Issue 4, p1-8. 8p. |
| Database: | Academic Search Ultimate |
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| ISSN: | 29958423 |
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| DOI: | 10.1063/5.0305050 |
