APA (7th ed.) Citation

Bai, R., Seshadri, P., Chen, J., Mukhopadhyay, S., Li, C., Pasayat, S. S., & Gupta, C. (2025). Improved dispersion control and gate stability in scaled RF GaN HEMTs using ALD TiN gate. APL Electronic Devices, 1(4), 1. https://doi.org/10.1063/5.0305050

Chicago Style (17th ed.) Citation

Bai, Ruixin, Parthasarathy Seshadri, Jiahao Chen, Swarnav Mukhopadhyay, Chenglong Li, Shubhra S. Pasayat, and Chirag Gupta. "Improved Dispersion Control and Gate Stability in Scaled RF GaN HEMTs Using ALD TiN Gate." APL Electronic Devices 1, no. 4 (2025): 1. https://doi.org/10.1063/5.0305050.

MLA (9th ed.) Citation

Bai, Ruixin, et al. "Improved Dispersion Control and Gate Stability in Scaled RF GaN HEMTs Using ALD TiN Gate." APL Electronic Devices, vol. 1, no. 4, 2025, p. 1, https://doi.org/10.1063/5.0305050.