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Improved dispersion control and gate stability in scaled RF GaN HEMTs using ALD TiN gate.

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Title: Improved dispersion control and gate stability in scaled RF GaN HEMTs using ALD TiN gate.
Authors: Bai, Ruixin1 (AUTHOR) rbai33@wisc.edu, Seshadri, Parthasarathy1 (AUTHOR), Chen, Jiahao1 (AUTHOR), Mukhopadhyay, Swarnav1 (AUTHOR), Li, Chenglong1 (AUTHOR), Pasayat, Shubhra S.1 (AUTHOR), Gupta, Chirag1 (AUTHOR)
Source: APL Electronic Devices. Dec2025, Vol. 1 Issue 4, p1-8. 8p.
Database: Academic Search Ultimate
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Header DbId: asn
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An: 190606916
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Improved dispersion control and gate stability in scaled RF GaN HEMTs using ALD TiN gate.
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  Data: <searchLink fieldCode="JN" term="%22APL+Electronic+Devices%22">APL Electronic Devices</searchLink>. Dec2025, Vol. 1 Issue 4, p1-8. 8p.
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RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1063/5.0305050
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      – Code: eng
        Text: English
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        PageCount: 8
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      – TitleFull: Improved dispersion control and gate stability in scaled RF GaN HEMTs using ALD TiN gate.
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            NameFull: Bai, Ruixin
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            NameFull: Seshadri, Parthasarathy
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            NameFull: Chen, Jiahao
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            NameFull: Mukhopadhyay, Swarnav
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            NameFull: Li, Chenglong
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            NameFull: Pasayat, Shubhra S.
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            – D: 01
              M: 12
              Text: Dec2025
              Type: published
              Y: 2025
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