Numerical study on thermal stability Performance of 4H-SiC MOSFETs.

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Bibliographic Details
Title: Numerical study on thermal stability Performance of 4H-SiC MOSFETs.
Authors: Zulkifle, Nurul Amirah1, Aziz, Muhammad Hafiz Abd1, Seth, Muhammad Najmi Mohd1, Noorasid, Nur Syamimi1, Al-Ani, Oras Ahmed2, Yakult, Merve3, Arith, Faiz1 faiz.arith@utem.edu.my
Source: International Journal of Nanoelectronics & Materials. Jan2026, Vol. 19 Issue 1, p1-7. 7p.
Database: Academic Search Ultimate
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ISSN:19855761