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Numerical study on thermal stability Performance of 4H-SiC MOSFETs.

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Title: Numerical study on thermal stability Performance of 4H-SiC MOSFETs.
Authors: Zulkifle, Nurul Amirah1, Aziz, Muhammad Hafiz Abd1, Seth, Muhammad Najmi Mohd1, Noorasid, Nur Syamimi1, Al-Ani, Oras Ahmed2, Yakult, Merve3, Arith, Faiz1 faiz.arith@utem.edu.my
Source: International Journal of Nanoelectronics & Materials. Jan2026, Vol. 19 Issue 1, p1-7. 7p.
Database: Academic Search Ultimate
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Header DbId: asn
DbLabel: Academic Search Ultimate
An: 191757242
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PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Numerical study on thermal stability Performance of 4H-SiC MOSFETs.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Zulkifle%2C+Nurul+Amirah%22">Zulkifle, Nurul Amirah</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Aziz%2C+Muhammad+Hafiz+Abd%22">Aziz, Muhammad Hafiz Abd</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Seth%2C+Muhammad+Najmi+Mohd%22">Seth, Muhammad Najmi Mohd</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Noorasid%2C+Nur+Syamimi%22">Noorasid, Nur Syamimi</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Al-Ani%2C+Oras+Ahmed%22">Al-Ani, Oras Ahmed</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Yakult%2C+Merve%22">Yakult, Merve</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22Arith%2C+Faiz%22">Arith, Faiz</searchLink><relatesTo>1</relatesTo><i> faiz.arith@utem.edu.my</i>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22International+Journal+of+Nanoelectronics+%26+Materials%22">International Journal of Nanoelectronics & Materials</searchLink>. Jan2026, Vol. 19 Issue 1, p1-7. 7p.
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=asn&AN=191757242
RecordInfo BibRecord:
  BibEntity:
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 7
        StartPage: 1
    Titles:
      – TitleFull: Numerical study on thermal stability Performance of 4H-SiC MOSFETs.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Zulkifle, Nurul Amirah
      – PersonEntity:
          Name:
            NameFull: Aziz, Muhammad Hafiz Abd
      – PersonEntity:
          Name:
            NameFull: Seth, Muhammad Najmi Mohd
      – PersonEntity:
          Name:
            NameFull: Noorasid, Nur Syamimi
      – PersonEntity:
          Name:
            NameFull: Al-Ani, Oras Ahmed
      – PersonEntity:
          Name:
            NameFull: Yakult, Merve
      – PersonEntity:
          Name:
            NameFull: Arith, Faiz
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 01
              Text: Jan2026
              Type: published
              Y: 2026
          Identifiers:
            – Type: issn-print
              Value: 19855761
          Numbering:
            – Type: volume
              Value: 19
            – Type: issue
              Value: 1
          Titles:
            – TitleFull: International Journal of Nanoelectronics & Materials
              Type: main
ResultId 1