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Optimizing the crystallinity of ZrO2 gate insulator in indium gallium zinc oxide thin-film transistors through atomic layer deposition process temperature control.

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Title: Optimizing the crystallinity of ZrO2 gate insulator in indium gallium zinc oxide thin-film transistors through atomic layer deposition process temperature control.
Authors: Jeong, Hanseok1 (AUTHOR), Yoo, Soo Min1 (AUTHOR), Choe, Minki2 (AUTHOR), Baek, In-Hwan2 (AUTHOR) baek@inha.ac.kr, Jeon, Woojin1 (AUTHOR) woojin.jeon@khu.ac.kr
Source: Scientific Reports. 11/25/2025, Vol. 15 Issue 1, p1-9. 9p.
Database: Academic Search Ultimate
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ISSN:20452322
DOI:10.1038/s41598-025-25938-w