View in EDS HTML Full Text PDF Full Text

Demonstration of KV-class β-Ga2O3 trench junction barrier Schottky diodes with space-modulated junction termination extension.

Saved in:
Bibliographic Details
Title: Demonstration of KV-class β-Ga2O3 trench junction barrier Schottky diodes with space-modulated junction termination extension.
Authors: Gilankar, Advait1 (AUTHOR) agilanka@asu.edu, Gervassi-Saga, Julian1 (AUTHOR), McCartney, Martha R.2 (AUTHOR), Das, Nabasindhu1 (AUTHOR), Saha, Chinmoy Nath3 (AUTHOR), Liu, Yizheng3 (AUTHOR), McComas, David Malcolm1 (AUTHOR), Smith, David J.2 (AUTHOR), Kalarickal, Nidhin Kurian1 (AUTHOR)
Source: APL Electronic Devices. Mar2026, Vol. 2 Issue 1, p1-7. 7p.
Database: Academic Search Ultimate
Full text is not displayed to guests.
Description
ISSN:29958423
DOI:10.1063/5.0295311