APA (7th ed.) Citation

Gilankar, A., Gervassi-Saga, J., McCartney, M. R., Das, N., Saha, C. N., Liu, Y., . . . Kalarickal, N. K. (2026). Demonstration of KV-class β-Ga2O3 trench junction barrier Schottky diodes with space-modulated junction termination extension. APL Electronic Devices, 2(1), 1. https://doi.org/10.1063/5.0295311

Chicago Style (17th ed.) Citation

Gilankar, Advait, Julian Gervassi-Saga, Martha R. McCartney, Nabasindhu Das, Chinmoy Nath Saha, Yizheng Liu, David Malcolm McComas, David J. Smith, and Nidhin Kurian Kalarickal. "Demonstration of KV-class β-Ga2O3 Trench Junction Barrier Schottky Diodes with Space-modulated Junction Termination Extension." APL Electronic Devices 2, no. 1 (2026): 1. https://doi.org/10.1063/5.0295311.

MLA (9th ed.) Citation

Gilankar, Advait, et al. "Demonstration of KV-class β-Ga2O3 Trench Junction Barrier Schottky Diodes with Space-modulated Junction Termination Extension." APL Electronic Devices, vol. 2, no. 1, 2026, p. 1, https://doi.org/10.1063/5.0295311.