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Si-doped β-(AlxGa1−x)2O3 MESFETs grown via CIS-MOCVD on (010) β-Ga2O3.

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Title: Si-doped β-(AlxGa1−x)2O3 MESFETs grown via CIS-MOCVD on (010) β-Ga2O3.
Authors: Masten, Hannah N.1 (AUTHOR) marko.j.tadjer.civ@us.navy.mil, Lundh, James Spencer2 (AUTHOR), Pennachio, Daniel J.2 (AUTHOR), Lee, Ming-Hsun3 (AUTHOR), Spencer, Joseph A.2 (AUTHOR), Alema, Fikadu4 (AUTHOR), Osinsky, Andrei4 (AUTHOR), Jacobs, Alan G.2 (AUTHOR), Hobart, Karl D.2 (AUTHOR), Peterson, Rebecca L.5 (AUTHOR), Tadjer, Marko J.2 (AUTHOR)
Source: APL Electronic Devices. Mar2026, Vol. 2 Issue 1, p1-7. 7p.
Database: Academic Search Ultimate
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ISSN:29958423
DOI:10.1063/5.0307330