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Si-doped β-(AlxGa1−x)2O3 MESFETs grown via CIS-MOCVD on (010) β-Ga2O3.

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Title: Si-doped β-(AlxGa1−x)2O3 MESFETs grown via CIS-MOCVD on (010) β-Ga2O3.
Authors: Masten, Hannah N.1 (AUTHOR) marko.j.tadjer.civ@us.navy.mil, Lundh, James Spencer2 (AUTHOR), Pennachio, Daniel J.2 (AUTHOR), Lee, Ming-Hsun3 (AUTHOR), Spencer, Joseph A.2 (AUTHOR), Alema, Fikadu4 (AUTHOR), Osinsky, Andrei4 (AUTHOR), Jacobs, Alan G.2 (AUTHOR), Hobart, Karl D.2 (AUTHOR), Peterson, Rebecca L.5 (AUTHOR), Tadjer, Marko J.2 (AUTHOR)
Source: APL Electronic Devices. Mar2026, Vol. 2 Issue 1, p1-7. 7p.
Database: Academic Search Ultimate
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DbLabel: Academic Search Ultimate
An: 192689810
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Si-doped β-(Al<subscript>x</subscript>Ga<subscript>1−x</subscript>)<subscript>2</subscript>O<subscript>3</subscript> MESFETs grown via CIS-MOCVD on (010) β-Ga<subscript>2</subscript>O<subscript>3</subscript>.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Masten%2C+Hannah+N%2E%22">Masten, Hannah N.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> marko.j.tadjer.civ@us.navy.mil</i><br /><searchLink fieldCode="AR" term="%22Lundh%2C+James+Spencer%22">Lundh, James Spencer</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Pennachio%2C+Daniel+J%2E%22">Pennachio, Daniel J.</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Lee%2C+Ming-Hsun%22">Lee, Ming-Hsun</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Spencer%2C+Joseph+A%2E%22">Spencer, Joseph A.</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Alema%2C+Fikadu%22">Alema, Fikadu</searchLink><relatesTo>4</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Osinsky%2C+Andrei%22">Osinsky, Andrei</searchLink><relatesTo>4</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Jacobs%2C+Alan+G%2E%22">Jacobs, Alan G.</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Hobart%2C+Karl+D%2E%22">Hobart, Karl D.</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Peterson%2C+Rebecca+L%2E%22">Peterson, Rebecca L.</searchLink><relatesTo>5</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Tadjer%2C+Marko+J%2E%22">Tadjer, Marko J.</searchLink><relatesTo>2</relatesTo> (AUTHOR)
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22APL+Electronic+Devices%22">APL Electronic Devices</searchLink>. Mar2026, Vol. 2 Issue 1, p1-7. 7p.
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=asn&AN=192689810
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1063/5.0307330
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 7
        StartPage: 1
    Titles:
      – TitleFull: Si-doped β-(AlxGa1−x)2O3 MESFETs grown via CIS-MOCVD on (010) β-Ga2O3.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Masten, Hannah N.
      – PersonEntity:
          Name:
            NameFull: Lundh, James Spencer
      – PersonEntity:
          Name:
            NameFull: Pennachio, Daniel J.
      – PersonEntity:
          Name:
            NameFull: Lee, Ming-Hsun
      – PersonEntity:
          Name:
            NameFull: Spencer, Joseph A.
      – PersonEntity:
          Name:
            NameFull: Alema, Fikadu
      – PersonEntity:
          Name:
            NameFull: Osinsky, Andrei
      – PersonEntity:
          Name:
            NameFull: Jacobs, Alan G.
      – PersonEntity:
          Name:
            NameFull: Hobart, Karl D.
      – PersonEntity:
          Name:
            NameFull: Peterson, Rebecca L.
      – PersonEntity:
          Name:
            NameFull: Tadjer, Marko J.
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 03
              Text: Mar2026
              Type: published
              Y: 2026
          Identifiers:
            – Type: issn-print
              Value: 29958423
          Numbering:
            – Type: volume
              Value: 2
            – Type: issue
              Value: 1
          Titles:
            – TitleFull: APL Electronic Devices
              Type: main
ResultId 1