View in EDS HTML Full Text PDF Full Text

An electric characterization method for identifying the number and position of unintended defect dots formed in silicon quantum dot devices.

Saved in:

Bibliographic Details
Title:	An electric characterization method for identifying the number and position of unintended defect dots formed in silicon quantum dot devices.
Authors:	Chiashi, Yusuke¹ (AUTHOR) yusuke.chiashi@aist.go.jp, Kato, Kimihiko¹ (AUTHOR), Iba, Yoshihisa¹ (AUTHOR), Oka, Hiroshi¹ (AUTHOR), Iizuka, Shota¹ (AUTHOR), Asai, Hidehiro¹ (AUTHOR), Ogura, Minoru¹ (AUTHOR), Inaba, Takumi¹ (AUTHOR), Mori, Takahiro¹ (AUTHOR) yusuke.chiashi@aist.go.jp
Source:	APL Electronic Devices. Mar2026, Vol. 2 Issue 1, p1-6. 6p.
Database:	Academic Search Ultimate
Full text is not displayed to guests. Login for full access.

Description
ISSN:	29958423
DOI:	10.1063/5.0312498