Hydrogen and Oxygen Defect Engineering in Amorphous‐IGZO Thin‐Film Transistors by Rapid Thermal Annealing Ambient.
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| Title: | Hydrogen and Oxygen Defect Engineering in Amorphous‐IGZO Thin‐Film Transistors by Rapid Thermal Annealing Ambient. |
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| Authors: | Ghosh, Dipon Kumar1 (AUTHOR), Jenson, Christy Giji1 (AUTHOR), Anand, Nirmal1 (AUTHOR), Md. Sadaf, Sharif1 (AUTHOR) sharif.sadaf@inrs.ca |
| Source: | Physica Status Solidi. A: Applications & Materials Science. 4/22/2026, Vol. 223 Issue 8, p1-7. 7p. |
| Database: | Academic Search Ultimate |
| ISSN: | 18626300 |
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| DOI: | 10.1002/pssa.202501019 |
