APA (7th ed.) Citation

Ghosh, D. K., Jenson, C. G., Anand, N., & Md. Sadaf, S. (2026). Hydrogen and Oxygen Defect Engineering in Amorphous‐IGZO Thin‐Film Transistors by Rapid Thermal Annealing Ambient. Physica Status Solidi. A: Applications & Materials Science, 223(8), 1. https://doi.org/10.1002/pssa.202501019

Chicago Style (17th ed.) Citation

Ghosh, Dipon Kumar, Christy Giji Jenson, Nirmal Anand, and Sharif Md. Sadaf. "Hydrogen and Oxygen Defect Engineering in Amorphous‐IGZO Thin‐Film Transistors by Rapid Thermal Annealing Ambient." Physica Status Solidi. A: Applications & Materials Science 223, no. 8 (2026): 1. https://doi.org/10.1002/pssa.202501019.

MLA (9th ed.) Citation

Ghosh, Dipon Kumar, et al. "Hydrogen and Oxygen Defect Engineering in Amorphous‐IGZO Thin‐Film Transistors by Rapid Thermal Annealing Ambient." Physica Status Solidi. A: Applications & Materials Science, vol. 223, no. 8, 2026, p. 1, https://doi.org/10.1002/pssa.202501019.