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Hydrogen and Oxygen Defect Engineering in Amorphous‐IGZO Thin‐Film Transistors by Rapid Thermal Annealing Ambient.

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Title: Hydrogen and Oxygen Defect Engineering in Amorphous‐IGZO Thin‐Film Transistors by Rapid Thermal Annealing Ambient.
Authors: Ghosh, Dipon Kumar1 (AUTHOR), Jenson, Christy Giji1 (AUTHOR), Anand, Nirmal1 (AUTHOR), Md. Sadaf, Sharif1 (AUTHOR) sharif.sadaf@inrs.ca
Source: Physica Status Solidi. A: Applications & Materials Science. 4/22/2026, Vol. 223 Issue 8, p1-7. 7p.
Database: Academic Search Ultimate
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  Data: Hydrogen and Oxygen Defect Engineering in Amorphous‐IGZO Thin‐Film Transistors by Rapid Thermal Annealing Ambient.
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PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=asn&AN=193163612
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        Value: 10.1002/pssa.202501019
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      – Code: eng
        Text: English
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              Text: 4/22/2026
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              Y: 2026
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