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Sn 掺杂β-Ga2O3及其与本征空位缺陷复合结构的 第一性原理研究.

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Title: Sn 掺杂β-Ga2O3及其与本征空位缺陷复合结构的 第一性原理研究.
Alternate Title: First-Principles Study on Sn-Doped β-Ga2O3 and Its Composite Structures with Intrinsic Vacancy Defect.
Authors: 余博文1, 李琪1,2, 邢玉芳1, 赵昊1, 林娜1, 赵显2, 陶绪堂1, 贾志泰1
Source: Journal of Synthetic Crystals. May2026, Vol. 55 Issue 5, p763-771. 9p.
Database: Academic Search Ultimate
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An: 194414128
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  Data: Sn 掺杂β-Ga2O3及其与本征空位缺陷复合结构的 第一性原理研究.
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  Data: First-Principles Study on Sn-Doped β-Ga2O3 and Its Composite Structures with Intrinsic Vacancy Defect.
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      – Type: doi
        Value: 10.16553/j.cnki.issn1000-985x.2026.0006
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      – Code: chi
        Text: Chinese
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        PageCount: 9
        StartPage: 763
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      – TitleFull: Sn 掺杂β-Ga2O3及其与本征空位缺陷复合结构的 第一性原理研究.
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            NameFull: 余博文
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            NameFull: 李琪
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            NameFull: 邢玉芳
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            NameFull: 赵昊
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            NameFull: 林娜
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            NameFull: 赵显
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            NameFull: 陶绪堂
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            NameFull: 贾志泰
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            – D: 01
              M: 05
              Text: May2026
              Type: published
              Y: 2026
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              Value: 55
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              Value: 5
          Titles:
            – TitleFull: Journal of Synthetic Crystals
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