Atomic‐Plane Distance as a Structural Indicator for Carrier‐Phonon Decoupling and Band Convergence in Doped BiCuSeO.
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| Title: | Atomic‐Plane Distance as a Structural Indicator for Carrier‐Phonon Decoupling and Band Convergence in Doped BiCuSeO. |
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| Authors: | Yu, Penglu1 (AUTHOR), Li, Mingxuan1 (AUTHOR), Kainat, Javeria1 (AUTHOR), Zhou, Zhifang2 (AUTHOR) zhouzf@csu.edu.cn, Wei, Bin3 (AUTHOR) binwei@hpu.edu.cn, Lan, Jin‐Le1 (AUTHOR) lanjl@mail.buct.edu.cn, Yu, Yunhua1 (AUTHOR) yuyh@mail.buct.edu.cn, Jia, Xiaolong1 (AUTHOR), Yang, Xiaoping1 (AUTHOR), Lin, Yuan‐Hua4 (AUTHOR) |
| Source: | Advanced Functional Materials. Jul2026, p1. 11p. 6 Illustrations. |
| Database: | Academic Search Ultimate |
| ISSN: | 1616301X |
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| DOI: | 10.1002/adfm.76967 |
