APA (7th ed.) Citation

Yu, P., Li, M., Kainat, J., Zhou, Z., Wei, B., Lan, J., . . . Lin, Y. (2026). Atomic‐Plane Distance as a Structural Indicator for Carrier‐Phonon Decoupling and Band Convergence in Doped BiCuSeO. Advanced Functional Materials, 1. https://doi.org/10.1002/adfm.76967

Chicago Style (17th ed.) Citation

Yu, Penglu, et al. "Atomic‐Plane Distance as a Structural Indicator for Carrier‐Phonon Decoupling and Band Convergence in Doped BiCuSeO." Advanced Functional Materials 2026: 1. https://doi.org/10.1002/adfm.76967.

MLA (9th ed.) Citation

Yu, Penglu, et al. "Atomic‐Plane Distance as a Structural Indicator for Carrier‐Phonon Decoupling and Band Convergence in Doped BiCuSeO." Advanced Functional Materials, 2026, p. 1, https://doi.org/10.1002/adfm.76967.