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Voltage fluctuation of CMOS NAND gate analysed with large deviations theory.

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Title: Voltage fluctuation of CMOS NAND gate analysed with large deviations theory.
Authors: Yoshino, Daigo1 (AUTHOR), Tokura, Yasuhiro1 (AUTHOR) tokura.yasuhiro.ft@u.tsukuba.ac.jp
Source: European Physical Journal: Special Topics. Jul2026, Vol. 235 Issue 11, p2819-2824. 6p.
Database: Academic Search Ultimate
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Header DbId: asn
DbLabel: Academic Search Ultimate
An: 195284563
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PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Voltage fluctuation of CMOS NAND gate analysed with large deviations theory.
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  Data: <searchLink fieldCode="AR" term="%22Yoshino%2C+Daigo%22">Yoshino, Daigo</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Tokura%2C+Yasuhiro%22">Tokura, Yasuhiro</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> tokura.yasuhiro.ft@u.tsukuba.ac.jp</i>
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  Data: <searchLink fieldCode="JN" term="%22European+Physical+Journal%3A+Special+Topics%22">European Physical Journal: Special Topics</searchLink>. Jul2026, Vol. 235 Issue 11, p2819-2824. 6p.
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=asn&AN=195284563
RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1140/epjs/s11734-025-01790-x
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      – Code: eng
        Text: English
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      Pagination:
        PageCount: 6
        StartPage: 2819
    Titles:
      – TitleFull: Voltage fluctuation of CMOS NAND gate analysed with large deviations theory.
        Type: main
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          Name:
            NameFull: Yoshino, Daigo
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            NameFull: Tokura, Yasuhiro
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          Dates:
            – D: 25
              M: 07
              Text: Jul2026
              Type: published
              Y: 2026
          Identifiers:
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              Value: 235
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              Value: 11
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            – TitleFull: European Physical Journal: Special Topics
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