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4H-SiC PIN Diodes as Environment to Modify 7 Be Radioactive Decay Time.

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Title: 4H-SiC PIN Diodes as Environment to Modify 7 Be Radioactive Decay Time.
Authors: Boldrini, Virginia1 (AUTHOR), Di Benedetto, Luigi2 (AUTHOR), Carrano, Vincenzo2,3 (AUTHOR), Canino, Mariaconcetta1,4 (AUTHOR) mariaconcetta.canino@cnr.it, Casali, Nicola3,5 (AUTHOR), Buompane, Raffaele4,5,6 (AUTHOR), Santonastaso, Claudio1,4,5 (AUTHOR), Mitsou, Maria Lucia2,4,5 (AUTHOR), Chakraborty, Kajol3,4,5 (AUTHOR), Yadav, Ravi Prakash3,4 (AUTHOR), Singh, Arpana2,5 (AUTHOR), Pieruccini, Marco1,6 (AUTHOR), Degli Esposti Boschi, Cristian1 (AUTHOR), Laubenstein, Matthias6 (AUTHOR), Rubino, Alfredo2 (AUTHOR), Formicola, Alba3 (AUTHOR), Neitzert, Heinz Christoph2,5 (AUTHOR), Gialanella, Lucio4,5 (AUTHOR)
Source: Materials (1996-1944). Jul2026, Vol. 19 Issue 13, p2741. 15p.
Database: Academic Search Ultimate
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ISSN:19961944
DOI:10.3390/ma19132741