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Improvement of the Thermoelectric Properties in the FeSi 2 Semiconductor Through Cu and Al Doping.

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Bibliographic Details
Title: Improvement of the Thermoelectric Properties in the FeSi 2 Semiconductor Through Cu and Al Doping.
Authors: Saito, Tetsuji1 (AUTHOR)
Source: Energies (19961073). Jul2026, Vol. 19 Issue 13, p2997. 12p.
Database: Academic Search Ultimate
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ISSN:19961073
DOI:10.3390/en19132997