Improvement of the Thermoelectric Properties in the FeSi 2 Semiconductor Through Cu and Al Doping.
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| Title: | Improvement of the Thermoelectric Properties in the FeSi 2 Semiconductor Through Cu and Al Doping. |
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| Authors: | Saito, Tetsuji1 (AUTHOR) |
| Source: | Energies (19961073). Jul2026, Vol. 19 Issue 13, p2997. 12p. |
| Database: | Academic Search Ultimate |
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| FullText | Links: – Type: pdflink Text: Availability: 1 |
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| Header | DbId: asn DbLabel: Academic Search Ultimate An: 195441114 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Improvement of the Thermoelectric Properties in the FeSi 2 Semiconductor Through Cu and Al Doping. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Saito%2C+Tetsuji%22">Saito, Tetsuji</searchLink><relatesTo>1</relatesTo> (AUTHOR) – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Energies+%2819961073%29%22">Energies (19961073)</searchLink>. Jul2026, Vol. 19 Issue 13, p2997. 12p. |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=asn&AN=195441114 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.3390/en19132997 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 12 StartPage: 2997 Titles: – TitleFull: Improvement of the Thermoelectric Properties in the FeSi 2 Semiconductor Through Cu and Al Doping. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Saito, Tetsuji IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 07 Text: Jul2026 Type: published Y: 2026 Identifiers: – Type: issn-print Value: 19961073 Numbering: – Type: volume Value: 19 – Type: issue Value: 13 Titles: – TitleFull: Energies (19961073) Type: main |
| ResultId | 1 |