Electron mobility dependence on annealing temperature of W/HfO2 gate stacks: The role of the interfacial layer.
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| Title: | Electron mobility dependence on annealing temperature of W/HfO |
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| Authors: | Callegari, A.1 sandro@us.ibm.com, Jamison, P.1, Neumayer, D.1, Feely, F. Mc.1, Shepard, J.2, Andreoni, W.3, Curioni, A.3, Pignedoli, C.3 |
| Source: | Journal of Applied Physics. 1/15/2006, Vol. 99 Issue 2, p023709. 5p. 5 Graphs. |
| Database: | Academic Search Ultimate |
| ISSN: | 00218979 |
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| DOI: | 10.1063/1.2163980 |
